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HMC327MS8G / 327MS8GE
v04.0607
GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz
5
AMPLIFIERS - SMT
Typical Applications
This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: * Wireless Local Loop
Features
Gain: 21 dB Saturated Power: +30 dBm 45% PAE Supply Voltage: +5.0 V Power Down Capability Low External Part Count
Functional Diagram
General Description
The HMC327MS8G & HMC327MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 3.0 and 4.0 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.
Electrical Specifications, TA = +25 C, Vs = 5V, Vctl = 5V
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd = 0V/5V Vpd = 5V tON, tOFF 36 24 17 Min. Typ. 3.0 - 4.0 21 0.025 15 8 27 30 40 5.0 0.002 / 250 7 40 24 0.035 Max. Units GHz dB dB / C dB dB dBm dBm dBm dB mA mA ns
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC327MS8G / 327MS8GE
v04.0607
GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz
Broadband Gain & Return Loss
25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz)
S21 S11 S22
Gain vs. Temperature
24 22 20 18 16 GAIN (dB) 14 12 10 8 6 4 2 0 2.5 3 3.5 FREQUENCY (GHz) 4 4.5
+25 C +85 C -40 C
5
AMPLIFIERS - SMT
5 - 73
Input Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 2.5
+25 C +85 C -40 C
Output Return Loss vs. Temperature
0
+25 C +85 C -40 C
RETURN LOSS (dB) 4.5
-5
-10
3
3.5 FREQUENCY (GHz)
4
-15 2.5
3
3.5 FREQUENCY (GHz)
4
4.5
P1dB vs. Temperature
34 32 30 28 P1dB (dBm) 26 24 22 20 18 16 14 2.5 3 3.5 FREQUENCY (GHz) 4 4.5
+25 C +85 C -40 C
Psat vs. Temperature
34 32 30 28 Psat (dBm) 26 24 22 20 18 16 14 2.5 3 3.5 FREQUENCY (GHz) 4 4.5
+25 C +85 C -40 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC327MS8G / 327MS8GE
v04.0607
GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz
5
AMPLIFIERS - SMT
Power Compression @ 3.5 GHz
48 Pout (dBm), GAIN (dB), PAE (%) 42 36 30 24 18 12 6 0 -5 -3 -1 1 3 5 7 9 11 13 15 INPUT POWER (dBm)
Pout (dBm) Gain (dB) PAE (%)
Output IP3 vs. Temperature
44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 2.5
OIP3 (dBm)
+25 C +85 C -40 C
3
3.5 FREQUENCY (GHz)
4
4.5
Noise Figure vs. Temperature
10 9 8 NOISE FIGURE (dB) 7
Gain & Power vs. Supply Voltage
28 27 26 25 GAIN dB) 24 23 22 21 20 19
4.5
Gain
32 31 30 29 28 27 26 25
P1dB Psat
6 5 4 3 2 1 0 3 3.5 4 FREQUENCY (GHz)
+25 C +85 C -40 C
24 23 22 5.25
18 4.75
5 Vcc SUPPLY VOLTAGE (Vdc)
Reverse Isolation vs. Temperature
0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 2.5
Power Down Isolation
0 -5 -10
+25 C +85 C -40 C
ISOLATION (dB) 4 4.5
-15 -20 -25 -30 -35 -40 2.5
3
3.5 FREQUENCY (GHz)
3
3.5 FREQUENCY (GHz)
4
4.5
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC327MS8G / 327MS8GE
v04.0607
GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz
Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz
30 GAIN (dB), P1dB (dBm), Psat (dBm) 250
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) Control Voltage (Vpd) +5.5 Vdc +5.5 Vdc +16 dBm 150 C 1.88 W 34 C/W -65 to +150 C -40 to +85 C
5
AMPLIFIERS - SMT
5 - 75
25
200
RF Input Power (RFin)(Vs = Vctl = +5.0 Vdc) Junction Temperature
Icq (mA)
20
Icq
150
Continuous Pdiss (T = 85 C) (derate 29 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature
15
P1dB Psat Gain
100
10
50
5 2.5 3 3.5 4 Vpd (Vdc) 4.5 5
0
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number HMC327MS8G HMC327MS8GE Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1
[1]
Package Marking [3] H327 XXXX H327 XXXX
[2]
[1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC327MS8G / 327MS8GE
v04.0607
GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz
5
AMPLIFIERS - SMT
Pin Descriptions
Pin Number Function Description Interface Schematic
1
Vpd
Power Control Pin. For maximum power, this pin hsould be connected to 5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced.
2, 4, 7
GND
Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required.
3
RFIN
This pin is AC coupled and matched to 50 Ohms from 3.0 to 4.0 GHz.
5, 6
RFOUT
RF output and bias for the output stage. The power supply for the output device needs to be supplied to these pins.
8
Vcc
Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed as close to the device as possible.
5 - 76
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC327MS8G / 327MS8GE
v04.0607
GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz
Evaluation PCB
5
AMPLIFIERS - SMT
List of Materials for Evaluation PCB 104991
Item J1 - J2 J3 C1 - C3 C4 C5 C6 L1 R1 U1 PCB [2] Description PCB Mount SMA RF Connector 2 mm DC Header 330 pF Capacitor, 0603 Pkg. 1.2 pF Capacitor, 0603 Pkg. 2.0 pF Capacitor, 0402 Pkg. 2.2 F Capacitor, Tantalum 3.0 nH Inductor, 0805 Pkg. 130 Ohm Resistor, 0603 Pkg. HMC327MS8G / HMC327MS8GE Amplifier 104829 Eval Board
[1]
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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